population caen 2019

Brick DC-DC converters are widely used in data center, telecommunication and automotive applications, converting a nominal 48 V to a nominal 12 V distribution bus among other output voltages. endobj GaN Systems’ EZDrive (SM) circuit is a low cost, easy way to implement a GaN driving circuit. GaN Systems has a proven low cost, small size gate drive solution called EZDrive ® which converts a typical 0-12V MOSFET driver output to a -6V to +6V GaN drive. GaN Systems is the leader in Gallium Nitride (GaN) based power management devices, specializing in power conversion, semiconductors and transistors. eGaN FETs are capable of switching much faster than Si MOSFETs, requiring more careful consideration of PCB layout design to minimize parasitic inductances. Calculations of device temperature during operation assume that power dissipation is spread evenly over the entire active area of the device, which is not always true. 2 — 1 September 2015 4 of 14 AN11130 Bias module for 50 V GaN demonstration boards 3. GN005 Rev 2014-11-04 © 2009 - 2014 GaN Systems Inc. 4 ! switching!speed!can!be!bettercontrolled!asthe!Millercharge!iscontrolled! Figure 1. <> This application note will look into designing a 44 V to 60 V input, 12 V to 20 V, 12.5 A output, thin DC/DC power module with low temperature rise using eGaN FETs in the simple and low-cost synchronous buck topology. Reflectance This application note will address the issues associated with biasing, bias sequencing and temperature compensation of a Nitronex GaN HEMT. This application note outlines how the PE29102 pulse width modulation (PWM) gallium nitride (GaN) driver can be used as a power-up sequencer for use with depletion-mode GaN radio frequency (RF) transistors. Advancements in eGaN FET-based converters’ in-circuit capability drives high performance measurement requirements. eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. GN010 Application Note ... GaN Systems EZDrive circuit is a low cost, easy way to implement a GaN driving circuit with a standard MOSFET controller with integrated driver Application Considerations Silicon MOSFETS Proper assembly techniques are essential to take full advantage of GaN technology capability. The EPC GaN transistors generally behave like n-channel power MOSFETs. This application note reviews the key steps to design an optimal power stage layout with eGaN FETs, to avoid these unwanted effects and maximize the converter performance. The AirFuel Alliance has developed the standard for resonant wireless power applications. The smallest, most cost effective, highest efficiency and 25 A capable non-isolated 48 V to 5-12V converter, suitable for high-performance computing and telecommunication applications, can be accomplished by employing eGaN® FETs such as the EPC2053. 4 0 obj Application Note Outline • The Basics - Our top side cooled GaN. Nomenclature The device name (type number) is shown at the top of the data sheet. We hope that we can serve you in your product design and contribute to … Application Note: Using Peregrine’s High-Speed FET Drivers Application Note: Using the PE29102 as a Power-up Sequencer for Depletion-mode RF GaN HEMT Amplifiers Application Note: PE29101/102 Footprint Requirements Application Note: Using the PE29102 Driver as a Differential Voltage Translator Application Note: Class D Audio Using the PE29102 This article compares various measurement techniques and technologies’ capability of accurately evaluating high performance eGaN FETs in applications. This is the first time in 60 years that there has been a non-silicon technology that has both superior performance and price compared with their silicon-based counterpart. This application note presents a high-performance thermal solution to extend the output current capability of eGaN-based converters. GaN Systems – Confidential – 1 GN010 Application Note. There are four important points to note about using this GPS circuit. This application note focuses on how to leverage the measurement equipment for the user’s requirement and measurement techniques to accurately evaluate high performance GaN transistors. GN010 Application Note ... GaN Systems EZDrive circuit is a low cost, easy way to implement a GaN driving circuit with a standard MOSFET controller with integrated driver Application Considerations Silicon MOSFETS In this white paper we continue our exploration of optimization issues and look at the impact of dead-time on system efficiency for eGaN FETs and MOSFETs. APPLICATION NOTE ! In particular, the higher critical electrical field makes it very attractive for power semiconductor devices with outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs, which makes GaN HEMTs great for high speed switching. The expansion of applications such as cloud computing, wearables, machine learning, autonomous driving, and IoT drive us towards an even more data-intensive world, increasing demands on data centers and power consumption [1, 2]. improves the performance in multiple operating environments. A compact, cost effective, high-power and high-efficiency 48 V to 12 V buck converter, suitable for high-power computing and telecommunication applications, can be achieved by employing eGaN FETs such as EPC2045 in a multiphase topology. The main trend has been towards higher power density given the form factor is fixed. SM. Here are the guidelines for manual assembly of these FETs and ICs. It considers several suitable circuit configurations a nd determines which one presents the most advantageous use with a GaN power switch. EZDrive. This white paper will study the effect of parasitic inductance on performance for eGaN FET and MOSFET based point of load (POL) buck converters operating at a switching frequency of 1 MHz, an input voltage of 12 V, an output voltage of 1.2 V, and an output current up to 20 A. eGaN FETs differ from their silicon counterparts because of their significantly faster switching speeds and consequently have different requirements for gate drive, layout, and thermal management which can all be interactive. In this application note, we will demonstrate how system optimization for a 48 V – 12 V nonisolated, fully regulated, intermediate bus converter (IBC) can achieve higher power density and efficiency with eGaN FETs. Advances in GaN integrated circuit (IC) technology have enabled the integration of the half bridge and gate drivers, resulting in a single chip solution that simplifies layout, minimizes area, and reduces cost. <> <> high voltage GaN FETs, this application note offers a brief introduction to each type of GaN device, and one possible driver circuit for each type of device. 1.1 — 13 February 2019 Application note Document information Information Content Keywords GaN FET, Half bridges, Circuit design, PCB layout Abstract This appplication note explains the Recommendations for circuit design and PCB layout when applying GaN FET half bridges. endstream eGaN FETs and integrated circuits from EPC have taken a very different approach to packaging power semiconductors – we have ditched the package altogether. 3. Parasitic inductances cause higher overshoot voltages and slower switching transitions. In this application note, we will discuss paralleling high speed GaN transistors in applications requiring higher output current. The LLC resonant converter is a remarkable candidate to provide a high power density and high efficiency solution. The paper will then compare thermally derived calculations with measured results. Without effciency and reliability, a new device structure would have no chance of economic viability. Fundamentals of a GaN HEMT. %���� Common curve tracers, parametric analyzers, and automatic discrete device parametric testers that are used for an n-channel power MOSFET will be applicable for the characterization of GaN transistors. This application note, which is written for those who have basic knowledge on circuit design and Si power devices, to understand how to use our GaN power transistor. To address these needs, inverters powering the motors need to operate at higher frequency, but require advanced techniques to reduce the resultant higher power loss. In this application note, we present data showing the installation of the kSA RateRat thin-film deposition monitor for real-time analysis of GaN films commonly used for high-brightness LED’s and radio frequency power electronics. 2. A comparison between the classical isolated gate driving solutions based on pulse transformers and the modern solutions employing isolated gate This white paper will explore the optimization of PCB layout for an eGaN FET based point of load (POL) buck converter, comparing the conventional designs and proposing a new optimal layout to further reduce parasitics. %PDF-1.7 GaN Systems makes it easy for designers and systems engineers to adopt gallium nitride solutions. High frequency capability adds further value in size and transient response in regulators, and fidelity in class D amplifiers. Efficient Power Conversion Corporation (EPC), the world’s leader in enhancement mode gallium nitride on silicon (eGaN) power FETs and ICs has developed a next generation of eGaN technology that makes it possible to cut the size of our products in half, while giving the power system designer access to significantly higher performance. x��T�n�@�[�?�q7���]�zW�"B�DI� APPLICATION NOTE ! A detailed description of the EPC enhancement mode transistors and integrated circuits physical characteristics is given including the visual criteria all devices must meet before they are released for shipment to customers. A fabless power semiconductor company, GaN Systems is headquartered in Ottawa, Canada. The first is that there is obviously a finite delay between the application of an RF pulse at the input and the GaN device turning on, and likewise for the turn off sequence., and these delays and the associated rise and fall times are detailed later on in this application note. EPC’s innovative wafer level, chip-scale packaging has enabled a new state-of-the-art in power density. 1 0 obj December 21, 2018 Note that suggested passive component values vary with FET manufacturer and part number. In this application note we present the new EPC8000 series devices and highlight some of the key features that make this transistor family suitable for high frequency applications. Thermal Equations: The thermal resistance ( θJC) in degrees centigrade per watt (°C/W) multiplied by the power dissipation GN005 Rev 150212 © 2009 - 2015 GaN Systems Inc. 1 ! This application note presents isolated gate driving solutions to increase the system efficiency, power density and robustness of high-performance power conversion applications. endobj Application Note 3 of 29 V 1.0 2018-05-03 Driving CoolGaN™ 600 V high electron mobility transistors Introduction 1 Introduction Gallium nitride (GaN) is a very promising material for power semiconductors. Supplying The multi-level converter is an exceptional candidate to shrink the size of the magnetic components and achieve high efficiency in a compact solution. Gallium nitride (GaN) offers fundamental advantages over silicon. Bandwidth Limiting Factors From the design methodology above it can be seen that there are two key parameters that determine (How2AppNote002), How to Design a Compact Low-voltage BLDC Motor Drive Inverter Using a Monolithic GaN ePower™ Stage (How2AppNote017), How to Design a Highly Efficient, 2.5 kW, Universal Input Voltage Range, Power Factor Correction (PFC) 400 V Rectifier Using 200 V eGaN FETs (How2AppNote016), The Growing Ecosystem for eGaN FET Power Conversion (How2AppNote005), How to Design an eGaN FET-Based Power Stage with an Optimal Layout (How2AppNote007), Designing PCB Footprint for EPC eGaN FETs and ICs (How2AppNote008), How to Manually Assemble an eGaN FET or IC (How2AppNote003), How to Get More Power Out of a High-Density eGaN-Based Converter with a Heatsink (How2AppNote012), How to Effectively Measure High Performance eGaN FETs in Applications (How2AppNote006). The SEPIC converter is ideal for applications with a wide input voltage range and where the output voltage can be either below or above the input voltage. APPLICATION NOTE AN-013 NITRONEX CORPORATION 8 MAY 2009 5. APPLICATION NOTE ! In this white paper eGaN FET technology is applied in a high frequency resonant converter. Power transistors made using gallium nitride (GaN) instead of silicon have been in production for several years. <>/Metadata 2917 0 R/ViewerPreferences 2918 0 R>> 5 0 obj Gallium nitride based transistors and ICs offer designers of power converters a path towards achieving higher output power, higher efficiency, and higher power density. Application note Rev. The smallest, most cost effective and highest efficiency non-isolated 12 V to 1.0 V POL converter, suitable for high-performance computing, cryptocurrency and telecommunication applications, can be achieved by employing monolithic eGaN® IC half-bridges such as the EPC2111. PX ®-T devices • Thermal Design for high-power with GaN. This application note is intended for Infineon customers and partners using Infineon’s CoolGaN™ technology. • Good engineering practice of layout techniques are required to minimize parasitic inductance and fully utilize the benefit of GaN Systems’E-HEMTs. A basic limitation of a power transistor is temperature. With improvements in switching figure of merit provided by eGaN FETs, the packaging and PCB layout parasitics are critical to high performance. This is EPC’s fifth generation (Gen 5) GaN technology and it is further evidence that GaN-on-silicon is a rapidly improving technology that is already more than 10 X higher performance than silicon MOSFETs while costing less to produce. PX ®-T • Heatsink Mounting Design Considerations • Bending Pressure and Deformation Limits This paper will demonstrate the ability of the eGaN FET to improve efficiency and output power density in a soft switching application, as compared to what is achievable with existing power MOSFET devices. The EPC9093 GaN development board configured as a synchronous buck converter yields a main power stage area of only 10 mm x 9 mm, at least 2x smaller than its Si equivalent, and is capable of producing an output voltage ranging from 5 V to 12 V. The smallest, most cost effective and highest efficiency non-isolated 48 V to 12 V converter, suitable for high-performance computing and telecommunication applications, can be achieved by employing eGaN® FETs such as the EPC2045. The name contains some In the last few years, one particular form of lidar, time-of-flight (TOF) distance measurement, has become popular. Using eGaN™ FETs is very similar to using power MOSFETs. In the last few years, however, the rate of improvement has slowed as the silicon power MOSFET has asymptotically approached its theoretical bounds. a new value to the product. EPC’s wafer level chip-scale packaging such as the Land Grid Array (LGA) and Ball Grid Array (BGA) packages shown in figure 1, has enabled a new level of performance in power conversion. We will also take a detailed look at an eGaN FET based multilevel topology that can further maximize the benefit of using eGaN FETs over conventional silicon solutions. x���wX�w���K.���>{�����={w��F�Ʈ���XP���,��H�EPPD���"`A@�.�0�T�cX�3��y�דG��|�� �c>����w�~ ��0�x��@S��&V�> ��Loc�1���n�^����/�v�jq���;���]������G�����1s���� �s�k���&��Na'.܍J�I~P��_Y\^W]'�4ɟh�J�jK�c�k�s���o. endobj In this white paper the die size optimization process for selecting the eGaN FET optimal on-resistance is discussed and an example application is used to show specific results. EPC8009, and relatively slower switching GaN transistors, such as the EPC2045 and EPC2022. APPLICATION NOTE AN-011 NITRONEX CORPORATION 5 JUNE 2008 Growth of high quality GaN on Si (111) can be achieved by addressing the significant levels of lattice misfit (~17%) and thermal expansion coefficient (TEC) (~ 56%) mismatch. 2.0 — 14 August 2020 application note Document information Information Content Keywords GaN FET Abstract Power Gallium Nitride(GaN) technology shows the greatest performance benefits against other incumbent technologies including silicon (Si) technology. In the future, GaN technology, as opposed to common silicon IC technology, will allow designers to implement monolithic power systems on a single chip in a more straightforward and cost-effective way. When combined with steerable optics, one can sweep the spot distance measurement and map objects in 3-D space. endobj PCB Thermal Design Guide for GaN Enhancement Mode Power Transistors The extremely high performance of GaN and the ultra-low inductance of the chip-scale package make eGaN FETs the ideal switches for pulsed laser drivers. Light Detection and Ranging (Lidar) is a remote sensing technology which transmits pulses of light from the sensor and measures the reflection to determine the location and distance of objects. Even though the eGaN FET was designed and optimized as a power-switching device, it also exhibits good RF characteristics. for GaN FET half bridges Rev. 3 0 obj The rapid expansion of the computing and telecommunication market is demanding an ever more compact, efficient and high power density solution for intermediate bus converters. GN001 Rev 2014-10-21 © 2009 - 2014 GaN Systems Inc. 2 ! Application Note Revision 1.0 www.infineon.com/GaN 03-05-2018 AN_201702_PL52_010 CoolGaN™ application note Author: Eric Persson About this document Scope and purpose This document describes the main features of nfineon’s 600 V oola ™ enhancement-mode (normally off) gallium nitride (GaN) power transistors. They address convenience-of-use issues such as source to device distance, device orientation on the source, multiple devices on a single source, higher power capability, simplicity of use, and imperfect placement. Beyond just performance and cost improvement, the greatest opportunity for GaN technology to impact the power conversion market comes from its intrinsic ability to integrate multiple devices on the same substrate. All rights reserved. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. This increase reduces the efficiency of the power amplifier (PA). The system was installed on a commercial, multi-wafer MOCVD reactor. The EPC9205 configured as a synchronous Buck converter yielded a power density of 1400 W/in3 and is capable of delivering 15 A. This application note examines in detail the data sheet for the GAN063-650WSA GaN FET device from Nexperia. Since ‘optimum’ means different things to different people, this process is aimed at maximizing switching device efficiency at a given load condition. PCB Thermal Analysis Figure!3!showsasimplified!thermal!model! In conclusion, small signal RF characteristics will also be provided. Drive Circuit is Similar to Standard MOSFET Circuit. The main focus is on the differences between GaN transistors and the In this application note, we introduce EPC’s new eGaN IC – EPC2112 that includes an integrated gate driver used in a 27 W, 14 V – 48 V input to 19 V output single-ended primary-inductor converter (SEPIC) built on the EPC9131 demonstration board. The island structure is the core GaN Systems IP. EPC offers a variety of technical documents including application notes and white papers for your use in designing with and evaluating our Gallium Nitride (GaN) based products and solutions. APPLICATION NOTE: GaN Bias Circuit Design Guidelines Octo ber 2019 | Subject to change without notice 2 of 6 www.qorvo.com Bias Sequencing Qorvo GaN devices are depletion mode devices and therefore require a negative gate voltage while the drain voltage is … As computers, displays, smart phones and other consumer electronics systems become thinner and more powerful, addressing the challenge of thinning the power converter and getting more power out of limited space without increasing the surface temperature increases in demand. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or This work will discuss the impact of in-circuit parasitics on performance and propose printed circuit board (PCB) layout methods to improve parallel performance of high speed GaN transistors. 3. This application note will address an eGaN FET module designed as a way for power-conversion systems designers to easily evaluate the exceptional performance of gallium nitride transistors. Fourth generation of GaN-on-silicon enhancement mode transistors (eGaN FETs) sets new performance records. This applications note provides guidelines to characterize DC parameters using Tektronix 576 curve tracer, Keithley 238 parametric analyzer, TESEC 881-TT/A discrete device test system. The EPC9204 configured as a synchronous Buck converter yielded a power density of 1000 W/in3 and is capable of delivering 12 A. EPC’s innovative wafer level, Land Grid Array (LGA) and Ball Grid Array (BGA) packaging has enabled a new level of performance in power conversion. This article describes the status and use of EPC device models, and illustrates some important considerations when incorporating EPC eGaN devices into a circuit model. • GaN Systems’E-HEMTs have very low packaging inductance, while enabling ultra-low inductance PCB power loops. It is adaptable to any power level, any frequency, and any LLC and PFC controller. The EZDrive (SM) circuit provides design control for the optimization of efficiency and EMI. GaN Enhancement mode High Electron Mobility Transistor (E-HEMT) • A lateral 2-dimensional electron gas (2DEG) channel formed on AlGaN/GaN hetero- epitaxy … Here are the guidelines of designing a correct footprint for any EPC part working from the datasheet. Single-phase buck converter can work efficiently at output currents up to 25 A, but the power efficiency drops significantly at higher currents. The chip-scale packaging of eGaN also offers six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. 6 0 obj Envelope tracking, or supply modulation, uses a dynamic power supply to vary the PA supply voltage in accordance with the time-varying envelope of the input signal so that the efficiency of the PA is maximized. UCC21220A Drives Cascode GaN FETs. • This application note shows key steps to design an optimal PCB layout with GaN <> However, A good understanding of the similarities and differences between these two technologies is a necessary foundation for understanding how much we can improve existing power conversion systems. endobj eGaN FET-based power conversion systems offer higher efficiency, increased power density, and lower overall system cost than Si-based alternatives. See our Application note GN010, “EZDrive Solution for GaN Systems E-HEMTs” Photo-Voltaic (PV) inverter size and cost are dominated by thermal management and passive elements used for bulk energy storage and filtering. The increase in switching speed offered by GaN transistors requires good measurement technology, as well as good techniques to capture important details of high-speed waveforms. =G*h�,���"�M\,�/������`�&/f �E�e$�Π�6mZf:0�v����?x�)�j�5g� Using eGaN FETs to increase efficiency and/or increase switching frequency will reduce the size and cost of the system. This family of products range from 30 V to 200 V and significantly widen the performance gap between the aging power MOSFET and gallium nitride-based transistors. This paper will describe the thermally derived Safe Operating Area (SOA) of power GaN FETs which demonstrate very good SOA characteristics while maintaining superior RDS(on). Modern communication systems demand high data capacity and high speed. 2 0 obj Although known for decades, the need for exotic and expensive substrate materials has severely limited its useful application areas. ��,J(R1)vT��3��B� �~���靯��C>��;��q�� Enter kSA RateRat Pro. Lidar is a form of radar where the electromagnetic radiation happens to be in the optical band. The basic requirements for power semiconductors are effciency, reliability, controllability, and cost effectiveness. GaN, GaAs, and LDMOS Compared 5.1. Previously, the advantages provided by eGaN FETs in hard switching isolated and non-isolated applications were addressed. Resonant wireless power systems use loosely-coupled, highly-resonant coils that are tuned to high frequencies (6.78 MHz or 13.56 MHz). Such applications have special requirements such as lightweight, small size, low torque ripple, and precision control. GaN FET Selection Tool for Buck Converters, Using Enhancement Mode GaN-on-Silicon Power FETs (eGaN, Accurately Measuring High Speed GaN Transistors (AN023), Paralleling High Speed GaN Transistors (AN020), Circuit Simulation Using Device Models (AN005), eGaN Parametric Characterization Guide (AN004), Dead-Time Optimization for Maximum Efficiency (WP012), Selecting eGaN FET Optimal On-Resistance (WP011), Optimizing PCB Layout with eGaN FETs (WP010), Impact of Parasitics on Performance (WP009), eGaN FET Drivers and Layout Considerations (WP008), eGaN FET Electrical Characteristics (WP007), Generation 5 eGaN Technology A Quantum Leap into a New Universe of Performance! An accurate circuit and device model is a valuable tool for developing new topologies, building successful designs, and shortening time to market. Now the superior performance of gallium nitride technology is displacing the power MOSFET. Copyright © 2021 Efficient Power Conversion Corporation. (AN022), eGaN FETs Deliver the Performance of GaN at the Price of Silicon (WP017), GaN Integration For Higher DC-DC Efficiency and Power Density (AN018), Fourth Generation eGaN FETs Widen the Performance Gap with the Aging MOSFET (AN017), Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications (AN015), Is it the End of the Road for Silicon in Power Conversion (AN001), eGaN ICs for Low Voltage DC-DC Applications (AN025), eGaN FETs for Lidar – Getting the Most Out of the EPC9126 Laser Driver (AN027), eGaN FETs for Low Cost Resonant Wireless Power Applications (AN021), Envelope Tracking Power Supply for Cell Phone Base Stations Using eGaN FETs (AN028), eGaN FETs for Photo-Voltaic Inverter Applications (AN016), eGaN FETs Small Signal RF Performance (WP016), eGaN FETs in High Frequency Resonant Converters (WP015), How to Design a Bi-Directional 1/16th Brick 48 V-12 V Converter Using Monolithic GaN ePower™ Stage (How2AppNote020), How to Design a Thin DC/DC Power Module with Low Temperature Rise Using eGaN FETs (How2AppNote019), How to Design a 300 W 48 V to 12 V, 9 V, 5 V Digitally Controlled 1/16, How to Design an Ultra-thin, Highly Efficient, Multi-level DC-to-DC Converter Using eGaN FETs (How2AppNote015), How to Exceed 98% Efficiency in a Compact 48 V to 6 V, 900 W LLC Resonant Converter Using eGaN FETs (How2AppNote014), Exceeding 98% Efficiency in a Compact 48 V to 12 V, 900 W LLC Resonant Converter Using eGaN FETs (How2AppNote011), Achieving Best-in-class 48 V to 12 V, 60 A DC-DC Converter Performance with the EPC9130 Multiphase Buck (How2AppNote010), Boosting Power Density in 48 V to 5-12 V DC-DC Converter Using EPC2053, with up to 25 A Output (How2AppNote009), Building the Smallest and Most Efficient 48 V to 5 - 12 V DC-DC Converter using EPC2045 and ICs (How2AppNote001), Building a Low Cost, High Efficiency 12 V to 1 V POL Converter Using EPC2111 (How2AppNote004), How to Build an Ultra-Fast High-Power Laser Driver - That Sees Farther, Better, and at a Lower Cost!

Webcam Anglet Sables D'or, Manuel Enseignement Scientifique Terminale 2020, Mentalist Saison 7 Vega, Solution D'acide Sulfurique Exercice, Partajon B2 Compréhension écrite, Inscription école De Foot Dfco, Fort Boyard Replay 11 Juillet 2020, Rue De Metz Auch, Billard Anglais Nom, Vente Hôtel Particulier Province,